w w w w fp830 fp830 fp830 fp830 rev, c nov. 2008 t02-2 cop yright@winsemi semiconductor co.,ltd.,all rights reserved. silicon silicon silicon silicon n-channel n-channel n-channel n-channel mosfet mosfet mosfet mosfet features features features features 4.5a,500v,r ds(on) (max 1.5 )@v gs =10v ultra-low gate charge(typical 32 nc) fast switching capability 100%avalanche tested maximum junction temperature range(150 ) general general general general description description description description this power mosfet is produced using winsemi s advanced planar stripe, dmos technology. this latest technology has been especially designed to minimize on-state resistance, have a high rugged avalanche characteristics. this devices is specially well suited for high efficiency switch model power supplies, power factor correction and half bridge and full bridge resonant topology line a e lectronic lamp ballast. absolute absolute absolute absolute maximum maximum maximum maximum ratings ratings ratings ratings thermal thermal thermal thermal characteristics characteristics characteristics characteristics symbol parameter value units v dss drain source voltage 500 v i d continuous drain current(@tc=25 ) 4.5 a continuous drain current(@tc=100 ) 2. 9 a i dm drain current pulsed (note1) 18 a v gs gate to source voltage 30 v e as single pulsed avalanche energy ( note 2) 300 mj e ar repetitive avalanche energy ( note 1) 7.5 mj dv/dt peak diode recovery dv/dt (note 3) 4.5 v/ns p d total power dissipation(@tc=25 ) 73 w derating factor above 25 0.55 w/ t j, t stg junction and storage temperature -55~150 t l maximum lead temperature for soldering purposes 300 symbol parameter value units min typ max r qjc thermal resistance, junction-to-case - - 1.7 /w r qcs thermal resistance, case to sink - 0.5 - /w r qja thermal resistance, junction-to-ambient - - 62.5 /w g g g g d d d d s s s s to220 to220 to220 to220
w w w w fp830 fp830 fp830 fp830 2 / 7 cop yright@winsemi semiconductor co.,ltd.,all rights reserved. electrical electrical electrical electrical characteristics characteristics characteristics characteristics (tc (tc (tc (tc = = = = 25 25 25 25 c) c) c) c) source source source source ? ? ? ? drain drain drain drain ratings ratings ratings ratings and and and and characteristics characteristics characteristics characteristics (ta (ta (ta (ta = = = = 25 25 25 25 c) c) c) c) note 1.repeativity rating :pulse width limited by junction temperature 2.l= 24 mh,i as =4.5a,v dd =50v,r g = 25 ,starting t j =25 3.i sd 4.5 a,di/dt 300a/us, v dd w w w w fp830 fp830 fp830 fp830 3 / 7 cop yright@winsemi semiconductor co.,ltd.,all rights reserved. fig. 1 on- state characteristics fig.2 transfer characteristics fig. 3 capacitance variation vs drain voltage fig. 5 on-resistance variation vs junction temperature fig. 4 breakdown voltage variation vs temperature fig. 6 gate charge characteristics
w w w w fp830 fp830 fp830 fp830 4 / 7 cop yright@winsemi semiconductor co.,ltd.,all rights reserved. fig. 7 maximum safe operation area fig. 9 transient thermal response curve fig. 8 maximum drain current vs case temperature
w w w w fp830 fp830 fp830 fp830 5 / 7 cop yright@winsemi semiconductor co.,ltd.,all rights reserved. fig.1 0 gate test circuit & waveform fig.1 1 resistive switching test circuit & waveform fig.1 2 unclamped inductive switching test circuit & waveform
w w w w fp830 fp830 fp830 fp830 6 / 7 cop yright@winsemi semiconductor co.,ltd.,all rights reserved. fig.1 3 peak diode recovery dv/dt test circuit & waveform
w w w w fp830 fp830 fp830 fp830 7 / 7 cop yright@winsemi semiconductor co.,ltd.,all rights reserved. to-220c to-220c to-220c to-220c package package package package dimension dimension dimension dimension u nit: mm
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